International Journal of Research and Innovation in Applied Science (IJRIAS)
Modification of the Electrical Properties of Sb/Al Bilayer Irradiated with Low Energy Krypton Ion Beam
Published January 30, 2026 • Vol. 11, Issue 1, pp. 393–395Open Access
DOI: 10.51584/IJRIAS.2026.11010033
Abstract
Sb (~50nm) over Al (~50nm) thin films were sequentially deposited on the silicon substrate in the current work using the e-beam evaporation method at a pressure of 2×10-5 mbar. Next, a 350 KeV Kr+1 beam with a fluence of 3×1016 ions/cm2 was used to irradiate the Sb/Al bilayer. Seebeck coefficient and Resistivity measurements were carried out on Pristine and Irradiated samples and results were compared.
Keywords: Aluminium Antimonide, Ion Beam mixing, Seebeck Coefficient, Resistivity
| Journal | International Journal of Research and Innovation in Applied Science (IJRIAS) |
|---|---|
| ISSN | 2454-6194 |
| Volume / Issue | Volume 11, Issue 1 |
| Pages | 393–395 |
| Publication date | January 30, 2026 |
| DOI | 10.51584/IJRIAS.2026.11010033 |
| Publisher | RSIS International |
| License | Open Access |
How to cite this article
Anil K Das (2026). Modification of the Electrical Properties of Sb/Al Bilayer Irradiated with Low Energy Krypton Ion Beam. International Journal of Research and Innovation in Applied Science (IJRIAS), 11(1), 393-395. https://doi.org/10.51584/IJRIAS.2026.11010033
BibTeX
@article{Anil2026,
title = {Modification of the Electrical Properties of Sb/Al Bilayer Irradiated with Low Energy Krypton Ion Beam},
author = {Anil K Das},
journal = {International Journal of Research and Innovation in Applied Science (IJRIAS)},
volume = {11},
number = {1},
pages = {393--395},
year = {2026},
doi = {10.51584/IJRIAS.2026.11010033},
publisher = {RSIS International}
}