RSIS Repository Open-access research from RSIS International journals

International Journal of Research and Innovation in Applied Science (IJRIAS)

Structural Modifications of Indium Over Selenium Bilayer Under the Irradiation of Low Energy Kr Ion Beam

byAnil K Das

Published December 26, 2025  •  Vol. 10, Issue 11, pp. 1528–1531Open Access
DOI: 10.51584/IJRIAS.2025.101100140

Abstract

In the present work In (~50nm)/Se (~50nm) and Se(~50nm)/In(~50nm) thin films were deposited successively on the glass substrate by thermal evaporation method under 1×10-5 mbar pressure at room temperature. The In/Se bilayers were irradiated with low energy ion beams of 350 Kev Kr+1. This sample was then characterised by High resolution XRD (HRXRD). HRXRD study reveals phase formation in Pristine sample where indium is on uppermost layer. So the experiments of Selenium over Indium were not executed further. Rutherford backscattering spectrometry (RBS) and SEM of the samples were also carried out. RBS shows mixing at Pristine sample. The Pristine annealed sample shows insulator property.

Keywords: Ion Beam Mixing, RBS, Indium Selenide

JournalInternational Journal of Research and Innovation in Applied Science (IJRIAS)
ISSN2454-6194
Volume / IssueVolume 10, Issue 11
Pages1528–1531
Publication dateDecember 26, 2025
DOI10.51584/IJRIAS.2025.101100140
PublisherRSIS International
LicenseOpen Access

How to cite this article

Anil K Das (2025). Structural Modifications of Indium Over Selenium Bilayer Under the Irradiation of Low Energy Kr Ion Beam. International Journal of Research and Innovation in Applied Science (IJRIAS), 10(11), 1528-1531. https://doi.org/10.51584/IJRIAS.2025.101100140

BibTeX

@article{Anil2025,
  title   = {Structural Modifications of Indium Over Selenium Bilayer Under the Irradiation of Low Energy Kr Ion Beam},
  author  = {Anil K Das},
  journal = {International Journal of Research and Innovation in Applied Science (IJRIAS)},
  volume  = {10},
  number  = {11},
  pages   = {1528--1531},
  year    = {2025},
  doi     = {10.51584/IJRIAS.2025.101100140},
  publisher = {RSIS International}
}